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Development of a novel planar-construction avalanche photodiode

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3 Author(s)
Gramsch, E. ; Dept. of Phys., Santiago de Compostela Univ., Spain ; Avila, R.E. ; Ferrer, J.

A deep-diffused large-area avalanche photodiode (APD) without bevel or grooves has been designed and built for use in low-light-level applications. The design does not incorporate a bevel edge or grooves to avoid early breakdown at the surface. The APD has been built using standard planar technology for silicon devices. Photodiodes with 2- and 3-mm diameter active area have been produced by deep boron diffusion, followed by shallow boron and phosphor diffusion. A gain of up to six is obtained at 1300 V before surface breakdown. The dark current is dependent on external voltage and is only 50-100 nA below breakdown. The energy resolution from a 57Co X-ray source (6.4 keV) was measured to be 1.47 keV, which corresponds to 174 rms electron noise. The energy resolution of a 137Cs source with an APD coupled to a 3×3×3 mm3 CsI(Tl) scintillator was 14.5%. We have also performed simulations of the gain and breakdown voltage that correlate well with the results

Published in:

Nuclear Science, IEEE Transactions on  (Volume:48 ,  Issue: 4 )

Date of Publication:

Aug 2001

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