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Radiation damage in silicon detectors for high-energy physics experiments

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1 Author(s)
M. Bruzzi ; Dipartimento di Energetica, Ist. Nazionale di Fisica Nucl., Rome, Italy

Radiation effects in silicon detectors are discussed in view of their application in future high-energy physics experiments. An overview is given of the major changes in the operational parameters due to radiation damage and their origin in the radiation-induced microscopic disorder in the silicon bulk. The principal radiation hardening technologies are described that have been adopted by the high-energy physics community to face the hostile radiation environment where silicon pixel and microstrip detectors will operate in the Large Hadron Collider

Published in:

IEEE Transactions on Nuclear Science  (Volume:48 ,  Issue: 4 )