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Selection criteria for P- and N-channel JFETs as input elements in low-noise radiation-hard charge preamplifiers

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4 Author(s)
M. Manghisoni ; Studio di Microelectronica, STMicroelectronics, Pavia, Italy ; L. Ratti ; V. Re ; V. Speziali

This paper describes a quantitative method for the selection of P- and N-channel junction field-effect transistors as input elements in low-noise charge-sensitive preamplifiers for applications requiring high radiation tolerance. The method is based upon a thorough analysis of ionizing radiation effects on the noise spectral density of such devices. It can be used to predict whether a P- or an N-type transistor is preferable as the front-end element of a preamplifier once the radiation doses and the electronic system readout times are known. Such criteria can he useful in the design of low-noise radiation-resistant electronics suitable for applications where high levels of total radiation dose are expected during the circuit lifetime

Published in:

IEEE Transactions on Nuclear Science  (Volume:48 ,  Issue: 4 )