By Topic

Behavior of new ZnSe(Te,O) semiconductor scintillators under high doses of ionizing radiation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Ryzhikov, V.D. ; Inst. for Single Crystals, Kharkov, Ukraine ; Starzhinskiy, N.G. ; Gal'chinetskii, L.P. ; Guttormsen, M.
more authors

Changes in scintillation and optical properties of scintillators based on ZnSe(Te,O) crystals were studied under influence of ionizing radiations: gamma (~1.3 MeV, up to 500 Mrad), protons (~18 MeV, fluence up to 1016 per cm-2), electrons (0.54-2.26 MeV, up to 50 Mrad), and neutrons (source-thermal reactor channel, fluence up to 1016 per cm2), Light output of gamma-irradiated scintillator crystals ZnSe(Te,O) was shown to decrease by less than 10-12% under doses of 100 Mrad, with transparence in the visible range worse by only 10-12%. Effects of electron irradiation are similar. Under neutron irradiation of crystals, increase in their light output by 20-150% is observed, with nontrivial changes of optical characteristics in the visible and infrared (IR) spectral ranges. Proton irradiation caused the most sharp degradation of scintillation properties of ZnSe(Te,O) crystals, with selective absorption bands appearing in the IR (4-7 μm) region. Accounting for the role of recombination centers related to zinc vacancies and properties of interstitial zinc atoms, a model is considered of radiation-stimulated processes in ZnSe(Te,O) semiconductor scintillators

Published in:

Nuclear Science, IEEE Transactions on  (Volume:48 ,  Issue: 4 )