By Topic

Gain, refractive index change, and linewidth enhancement factor in broad-area GaAs and InGaAs quantum-well lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
J. Stohs ; Dept. of Phys., New Mexico Univ., Albuquerque, NM, USA ; D. J. Bossert ; D. J. Gallant ; S. R. J. Brueck

We report experimental and theoretical results for the injection-level dependence of the gain, refractive index variation, and linewidth enhancement factor (α) for four different quantum-well (QW) laser structures. Two of the lasers have GaAs QW layers that vary in width while the other two have InGaAs active layers that vary in QW depth. Experimental Hakki-Paoli data are used to compare gain, index change, and α-parameter between these pairs of devices. The results of two simulations are compared to the experimental data. The first is based on the approximation of parabolic bands for both the conduction and valence bands while the second employs the k·p method to refine the calculation of the valence bands. Our findings include: (1) narrower and deeper QWs yield lower α values; (2) modeling results from the k·p method are only slightly improved over those from the parabolic band model; (3) at high injection levels, stimulated emission below threshold is a prominent effect in these devices; and (4) at high injection levels, carriers in the barrier energy states above the well are shown to be responsible for increasing α values

Published in:

IEEE Journal of Quantum Electronics  (Volume:37 ,  Issue: 11 )