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Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector

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4 Author(s)
Stiff, A.D. ; Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA ; Krishna, S. ; Bhattacharya, Pallab ; Kennerly, S.W.

The growth, fabrication, and characterization of a normal-incidence, high-temperature, mid-wavelength infrared, InAs-GaAs vertical quantum-dot infrared photodetector with a single Al0.3 Ga0.7As current-blocking barrier are described and discussed in detail. A specific detectivity ≈3×109 cmHz1/2/W is measured for a detector temperature of 100 K at a bias of 0.2 V. Detector characteristics are measured for temperatures as high as 150 K. The superior low bias performance of the vertical quantum-dot infrared photodetector ensures its compatibility with commercially available silicon read-out circuits necessary for the fabrication of a focal plane array

Published in:

Quantum Electronics, IEEE Journal of  (Volume:37 ,  Issue: 11 )