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Enhanced subthreshold leakage current due to impact ionization in deep sub-100nm N-channel double-gate MOSFETs

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3 Author(s)
Jae-Kwan Park ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Deshpande, H.V. ; Woo, J.C.S.

We reported the effect of impact ionization on the subthreshold leakage current in N-channel double-gate MOSFETs. In this paper, detailed analysis for the enhanced subthreshold leakage current due to impact ionization and its physical mechanism are discussed. Furthermore, the effect of the leakage current on the device scaling toward deep sub-100nm is also discussed

Published in:
SOI Conference, 2001 IEEE International

Date of Conference: 2001

Page(s):
147 - 148
Meeting Date :
01 Oct 2001-04 Oct 2001
ISSN :
1078-621X
Print ISBN:
0-7803-6739-1
INSPEC Accession Number:
7176155
Conference Location :
Durango, CO
Digital Object Identifier :
10.1109/SOIC.2001.958029
Product Type:
Conference Publications

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