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A novel CMOS SOI unbalanced Mach-Zehnder interferometer: from design and simulations to fabrication and characterization

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9 Author(s)
Dainesi, P. ; Swiss Fed. Inst. of Technol., Lausanne, Switzerland ; Thevenaz, L. ; Fluckiger, Ph. ; Hibert, C.
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This paper reports on a novel, simple yet reliable, unbalanced SOI Mach-Zehnder (M-Z) interferometer architecture based on 1.2 /spl mu/m CMOS process and adapted post-processing for the waveguide sidewalls. The fabricated electro-optical device is based on multiple PIN diode bars integrated on top of a SOI silicon waveguide and can be operated either at: (I) high-frequency (few MHz) based on the plasma dispersion effect and (II) low frequency (<1 MHz) based on the thermo-optic effect. The device main characteristics and figures of merit are presented and discussed.

Published in:

SOI Conference, 2001 IEEE International

Date of Conference:

1-4 Oct. 2001