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Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates

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7 Author(s)
Ragnarsson, L.-A. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Guha, S. ; Bojarczuk, N.A. ; Cartier, E.
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High-effective mobilities are demonstrated in Al/sub 2/O/sub 3/ based n-channel MOSFETs with Al gates. The Al/sub 2/O/sub 3/ was grown in ultra-high vacuum using a reactive atomic beam deposition system. The mobility with maximum values at approximately 270 cm/sup 2//Vs, is found to approach that of SiO/sub 2/ based MOSFETs at higher fields.

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Electron Device Letters, IEEE  (Volume:22 ,  Issue: 10 )