Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates

High-effective mobilities are demonstrated in Al/sub 2/O/sub 3/ based n-channel MOSFETs with Al gates. The Al/sub 2/O/sub 3/ was grown in ultra-high vacuum using a reactive atomic beam deposition system. The mobility with maximum values at approximately 270 cm/sup 2//Vs, is found to approach that of SiO/sub 2/ based MOSFETs at higher fields.