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Physical modeling of the reverse-short-channel effect for circuit simulation

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7 Author(s)
Miura-Mattausch, M. ; Dept. of Electr. Eng., Hiroshima Univ., Japan ; Suetake, M. ; Mattausch, H.J. ; Kumashiro, S.
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The proposed threshold-voltage (Vth) model for circuit simulation includes reverse-short-channel effects (RSCE) and short-channel effects (SCE) based on their respective physical origins. A linear vertical-impurity profile approximation for simplified RSCE-modeling already enables 8 mV average Vth-accuracy (max<45 mV) under all bias conditions for source, drain, and bulk for Lgate down to 0.15 μm. The complete Vth-model needs only ten constant Lgate-independent parameters

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 10 )

Date of Publication:

Oct 2001

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