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A SOI LDMOS technology compatible with CMOS, BJT, and passive components for fully-integrated RF power amplifiers

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4 Author(s)
Yue Tan ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China ; Kumar, M. ; Jun Cai ; Sin, J.K.O.

This paper presents a silicon-on-insulator (SOI) lateral double-diffused MOS transistor (LDMOS) technology, which is compatible with complementary metal oxide semiconductor (CMOS), lateral bipolar junction transistor (BJT), and passive components for the implementation of radio frequency (RF) fully-integrated power amplifiers (IPAs) used in wireless communications. This technology allows complete integration of the low-cost and low-power front-end circuits with the baseband circuits for single-chip wireless communication systems. The SOI LDMOS transistor (0.35 μm channel length, 3.85 μm drift length, 4.5 GHz fT , and 20 V breakdown voltage), CMOS transistors (1.5 μm channel length 0.8/-1.2 V threshold voltage), lateral BJT (18 V BVCBO, and 6.4 V BVCEO) and high Q-factor (up to 6.1 at 900 MHz and 7.2 at 1.8 GHz for an inductance of 7 nH) on-chip inductor are designed and fabricated to show the feasibility of the IPA implementation. A fully functional high performance integrated power amplifier for 900 MHz wireless communication transceivers is also demonstrated

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Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 10 )