Cart (Loading....) | Create Account
Close category search window

New SiGe bipolar transistors and p-i-n diodes for power switching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Hirose, F. ; Adv. Technol. Res. Center, Mitsubishi Kasei Corp., Yokohama, Japan ; Souda, Y. ; Nakano, K. ; Goya, S.
more authors

We have first fabricated bipolar transistors and p-i-n diodes for power switching by using SiGe. Misfit dislocations with Ge addition in the film allow the reduction of minority carrier lifetime. If the Ge concentration in the SiGe layer is chosen in the range below 10% to avoid excessive misfit dislocations, the breakdown characteristics of the pn-junction at the SiGe/Si heterojunction are not deteriorated. When SiGe is used at the base layer in npn-n+ bipolar transistors, a fast switching time of ~20 ns is possible in the 280 V-20 A class transistors, while the low on-voltage drop of 0.34 V is achieved at a collector current density of 113 A/cm2. Moreover, if SiGe is applied to the p-anode in the thin -p/n-n+ -diodes, the recovery time can be lowered more than 50% compared with Si diodes with the same structure

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 10 )

Date of Publication:

Oct 2001

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.