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Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers

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4 Author(s)
Bong-Hung Leung ; Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., Kowloon, China ; Wai-Keung Fong ; Chang-Fei Zhu ; C. Surya

Low-frequency excess noise was measured in a series of GaN epitaxial films deposited by RF-plasma assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were grown on double buffer layers, each consisting of an intermediate-temperature buffer layer (ITBL) deposited at 690°C and a conventional low-temperature buffer layer grown at 500°C. The Hooge parameters for the as-grown films were found to depend on the thickness of ITBL with a minimum value of 7.34×10 -2 for an optimal ITBL thickness of 800 nm. The observed improvements in the noise properties are attributed to the relaxation of residual strain within the material, leading to a corresponding reduction in crystalline defects

Published in:

IEEE Transactions on Electron Devices  (Volume:48 ,  Issue: 10 )