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A 2-D analytical threshold voltage model for fully-depleted SOI MOSFETs with Halos or pockets

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2 Author(s)
van Meer, H. ; IMEC, Leuven, Belgium ; de Meyer, K.

The exact solution of the two-dimensional (2-D) Poisson's equation has been analytically derived for fully-depleted (FD) SOI MOSFETs with Halos or pockets. The approach uses a three-zone Green's function solution technique. Explicit equations for the 2-D electrical potential as well as for both front- and back-side threshold voltages have been derived. The accuracy of the equations has been verified by a 2-D numerical device simulator. From the presented results, it can be concluded that the analytically derived model for the electric potential and threshold voltages are in good agreement with 2-D numerical simulation data

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 10 )

Date of Publication:

Oct 2001

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