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Fully implanted and zero thermal budget technology for silicon based monolithic power integrated circuits

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2 Author(s)
Patti, D. ; STMicroelectronics, Catania, Italy ; Sanfilippo, D.

A new technology for monolithic smart power circuits has been obtained by the extensive use of ion implantation with a wide range of energy and rapid thermal processes. Using the new technology to realize power devices with comparable or better performance than standard devices employing epitaxial technology is possible. A two micron thick silicon dioxide layer is formed on the wafer. After a photolithographic process, boron is implanted by multiple implantations technique

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Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual  (Volume:4 )

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