By Topic

Total dielectric isolation (TDI) of silicon device islands by a single O+ implantation stage

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Robinson, A.K. ; Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK ; Reeson, K.J. ; Hemment, P.L.F. ; Thomas, N.
more authors

It has recently been shown that SIMOX (separation by implantation of oxygen) technology can be extended to provide both vertical and lateral isolation of device islands by a single implantation stage. This technology (TDI) entails implantation of O+ ions through a deposited masking layer of SiO2 in which windows are opened to define the silicon device islands. However, the structures had detrimental characteristics (e.g. nonplanar surfaces and entrapped silicon islands in the synthesized SiO2) that detracted from the utility of the technique. A process is reported that produces improved structures, which are suitable for application to circuits

Published in:

SOS/SOI Technology Workshop, 1988. Proceedings., 1988 IEEE

Date of Conference:

3-5 Oct 1988