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A novel approach for improved green-emitting II-VI lasers

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9 Author(s)
M. Strassburg ; Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany ; O. Schulz ; U. W. Pohl ; D. Bimberg
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New concepts to improve the performance of green-emitting laser diodes, based on the ZnSe system, are presented. The benefits of implantation-induced disordering (IID) and a novel alleged contact structure are discussed. Using IID, index-guided lasers with low thresholds are fabricated. The introduction of Li3N-containing contacts leads to an acceptor indiffusion resulting in an increased p-type doping level and thereby extremely reduced turn-on voltages, threshold current densities, increased wall-plug efficiencies, and extended continuous-wave lifetimes

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IEEE Journal of Selected Topics in Quantum Electronics  (Volume:7 ,  Issue: 2 )