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Monolithic integration of laser and passive elements using selective QW disordering by RTA with SiO2 caps of different thicknesses

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6 Author(s)
Shimada, N. ; Dept. of Electron. Eng., Osaka Univ., Japan ; Fukumoto, Y. ; Uemukai, M. ; Suhara, T.
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Area-selective disordering of an InGaAs strained quantum wells (QWs) was performed by rapid thermal annealing with thick and thin SiO 2 caps. Fabry-Perot lasers were fabricated on a selectively-disordered wafers, and a lasing wavelength difference as large as 23 nm was obtained between the lasers in 300-nm and 30-nm capped areas. We present fabrication of lasers integrated with disordered passive waveguides and demonstrate significant reduction of the passive waveguide loss from roughly 40 cm-1 to 3 cm-1. A distributed Bragg reflector laser with QW disordering in the grating area was demonstrated, and remarkable improvement of laser characteristics was achieved compared to a laser without disordering

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:7 ,  Issue: 2 )