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Design and characterization of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers

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8 Author(s)
Selmic, S.R. ; Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA ; Tso-Min Chou ; Jiehping Sih ; Kirk, J.B.
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A comprehensive design method for long wavelength strained quantum-well lasers is applied to design uncooled multiple-quantum-well AlGaInAs-InP 1.3-μm lasers for communication systems. The method includes multiband effective mass theory and electromagnetic waveguide theory. The resulting AlGaInAs-InP laser has a threshold current of 12.5 mA at 25°C, with a slope efficiency of 0.43 W/A, at 77 K or greater characteristic temperature, a 38° perpendicular far-field beam divergence, and will operate at temperatures in excess of 100°C

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:7 ,  Issue: 2 )

Date of Publication:

Mar/Apr 2001

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