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High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence

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14 Author(s)
Sebastian, J. ; Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany ; Beister, G. ; Bugge, F. ; Buhrandt, E.
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AlGaAs-based large optical cavity (LOC) laser diodes (LDs) emitting at 808 nm using a tensile-strained GaAsP quantum-well (QW) were developed. LDs with 1-μm-LOC and 2 μm-LOC structure show a very high continuous wave (CW) output power (8.9 W), a good wall-plug efficiency (50%) and a low degradation rate (10-5 h-1 ). The power-current characteristics of broad area LDs with the 1-μm-LOC structure having a higher aluminum content in the waveguide layer exhibit a higher temperature stability. The 2-μm-LOC diode lasers with a lower aluminum content and thinner cladding layers has a slightly smaller vertical far-field divergence and a smaller series resistance. The 2-μm-LOC structure was used in laser bars. They have a filling factor of 28% and exhibit a maximum output power of 148 W with a good beam quality of 7.8° x 39° (full-width l/e2-power) at 70 W

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:7 ,  Issue: 2 )