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We have realized high-quality GaInAs-GaAs quantum wells (QWs) with high strain of over 2% on GaAs (311)B substrate for a polarization controlled vertical-cavity surface-emitting laser (VCSEL). By increasing the In composition in GaInAs, the optical anisotropy in photoluminescence (PL) intensity was increased. The anisotropy of 50% was obtained at 1.15 μm emission wavelength. We have demonstrated edge-emitting lasers and VCSELs emitting at over 1.1 μm on GaAs (311)B substrate for the first time. The 1.15-μm edge-emitting laser showed a characteristic temperature of 210 K and the threshold current density of 410 A/cm2. The threshold current and lasing wavelength of VCSELs are 0.9 mA and 1.12 μm, respectively. The orthogonal polarization suppression ratio was 25 dB and CW operation up to 170°C without a heat sink was achieved
Published in:
Selected Topics in Quantum Electronics, IEEE Journal of
(Volume:7
,
Issue:
2
)
Date of Publication: Mar/Apr 2001
- Page(s):
- 242 - 248
- ISSN :
- 1077-260X
- INSPEC Accession Number:
- 7070103
- Digital Object Identifier :
- 10.1109/2944.954136
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Mar/Apr 2001
- Sponsored by :
- IEEE Photonics Society
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