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Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation

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7 Author(s)
Niskiyama, N. ; Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan ; Arai, M. ; Shinada, S. ; Azuchi, M.
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We have realized high-quality GaInAs-GaAs quantum wells (QWs) with high strain of over 2% on GaAs (311)B substrate for a polarization controlled vertical-cavity surface-emitting laser (VCSEL). By increasing the In composition in GaInAs, the optical anisotropy in photoluminescence (PL) intensity was increased. The anisotropy of 50% was obtained at 1.15 μm emission wavelength. We have demonstrated edge-emitting lasers and VCSELs emitting at over 1.1 μm on GaAs (311)B substrate for the first time. The 1.15-μm edge-emitting laser showed a characteristic temperature of 210 K and the threshold current density of 410 A/cm2. The threshold current and lasing wavelength of VCSELs are 0.9 mA and 1.12 μm, respectively. The orthogonal polarization suppression ratio was 25 dB and CW operation up to 170°C without a heat sink was achieved

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:7 ,  Issue: 2 )