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Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

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6 Author(s)
Eliseev, P.G. ; Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM ; Li, H. ; Liu, T. ; Newell, T.C.
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Emission spectra and modal optical gain are investigated in ultralow-threshold MBE-grown InAs-InGaAs quantum dot (QD) structures. The record lowest room-temperature inversion current is found to be ~13 A cm-2. The rate-equation model is proposed describing the optical gain related to the ground-state (GS) transitions in QDs. The ground-state gain goes to the maximum value that corresponds to the total inversion of available levels. The gain cross section for the GS emission is estimated as ~7×10-15 cm2

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:7 ,  Issue: 2 )