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High power wideband AlGaN/GaN HEMT feedback amplifier module with drain and feedback loop inductances

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7 Author(s)
Y. Chung ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; S. Cai ; W. Lee ; Y. Lin
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A high power wideband feedback amplifier module using AlGaN/ GaN high electron mobility transistor has been developed that covers the frequency range of DC to 5 GHz with small signal gain of 9 dB. Shunt feedback topology is introduced by adding inductances to increase the bandwidth. At mid-band frequency, power added efficiency of 20% and a saturation power level of 29.5 dBm were obtained at a drain voltage of 12V (Vds) and a gate voltage of -3 V (Vgs)

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Electronics Letters  (Volume:37 ,  Issue: 19 )