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2.3 picoseconds optical gate monolithically integrating photodiode and electroabsorption modulator

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7 Author(s)
Kodama, S. ; NTT Photonics Labs., Kanagawa, Japan ; Ito, T. ; Watanabe, N. ; Kondo, S.
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A novel ultra-high-speed optical gate monolithically integrating a uni-travelling-carrier photodiode and a travelling-wave electroabsorption modulator (TW-EAM) is presented. By using the nonlinear extinction characteristics of the EAM, the minimum gate opening time of 2.3 picoseconds with an extinction ratio of 14 dB is achieved

Published in:

Electronics Letters  (Volume:37 ,  Issue: 19 )

Date of Publication:

13 Sep 2001

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