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Application of BEM to high-voltage junction termination

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5 Author(s)
Zilu Wu ; State Key Lab. of Transient Opt. Technol., Acad. of Sci., Xi'an, China ; Yumin Gao ; Jinsheng Luo ; Xun Hou
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Ideas for using the boundary element method (BEM) with the concept of critical electric field for simulation of high-voltage junction termination are introduced. Approaches for dealing with interface charges, depleted regions, and metal field plates are presented. Rules used to develop and apply the BEM program are given. Simulation of one silicon-on-insulator diode is performed and the results are compared with those obtained using the finite difference method

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IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:20 ,  Issue: 10 )