By Topic

Modeling the electrooptic evolution in thermally poled germanosilicate fibers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
De Francesco, A. ; Dept. of Electr. & Inf. Eng., Sydney Univ., NSW, Australia ; Town, G.E.

We formulate a simple quantitative three-species charge-carrier transport model, consisting of two distinct positive ions and a single negative ion, to describe the dynamics during thermal poling of a germanosilicate optical fiber. We numerically solved the equations and report one-dimensional space-time solutions for the electrooptic (EO) coefficient. In the two-cation model, our findings show the EO coefficient initially dips near the anode and then monotonically rises to a steady-state value, higher than that produced by the initial applied poling field. However, at the cathode, the electric field quickly dropped to zero where it remained zero for the poling duration. The introduction of a moving negative ion clearly shows the existence of a dead time characteristic appearing at the cathode, resulting in a gain in the initial EO coefficient. This model also reveals that the resulting EO evolution in a thermally poled germanium-boron codoped fiber can he attributed to the movement of just two ions of opposite polarity. To explain the increase in the EO coefficient in boron codoped germanosilicate fiber, we found it necessary to allow for an increase in the third-order susceptibility by a factor of ~3.4

Published in:

Quantum Electronics, IEEE Journal of  (Volume:37 ,  Issue: 10 )