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High-speed modulation of long-wavelength In1-xGax AsyP1-y and In1-x-yGaxAlyAs strained quantum-well lasers

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2 Author(s)
G. Liu ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; S. L. Chuang

In1-xGaxAs1-yPy quantum-well (QW) lasers with compressive strain and In1-x-yGaxAlyAs QW lasers with two strain types (compressively strained and lattice matched) for 1.55-μm telecommunication applications are investigated both in the steady-state and high-speed microwave modulation schemes. Under steady-state electric bias, the gain and intrinsic loss are measured based on the well-known Hakki-Paoli method from below threshold to threshold. The photon lifetime is obtained from this measurement. A comprehensive theoretical gain model with realistic band structure, including valence band mixing and many-body effects, is then used to fit the experimentally obtained modal gain profiles and extract the carrier density and, therefore, the differential gain. In the high-speed microwave modulation scheme, the experimental modulation response curves are fitted by the theory and parameters such as the differential gain and K factor are obtained. The differential gain agrees very well with the value obtained from the steady-state direct optical gain measurement. The comparison of two material systems will be important to design high-bandwidth high-performance semiconductor lasers in order to meet requirements of 1.55-μm telecommunication applications

Published in:

IEEE Journal of Quantum Electronics  (Volume:37 ,  Issue: 10 )