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Very high conversion gain microwave frequency doubler circuit design

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2 Author(s)

This paper focuses on the design and fabrication of frequency doublers operating in the RF and microwave frequency ranges. A single PHEMT transistor is employed in a new approach which has resulted in conversion gains of 10 dB or greater. This is a significant improvement over previous realizations

Published in:

Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on  (Volume:1 )

Date of Conference:

2000