By Topic

Stress analysis of silicon membranes with electroplated permalloy films using Raman scattering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Cho, Hyoung J. ; Dept. of Electr. & Comput. Eng. & Comput. Sci., Cincinnati Univ., OH, USA ; Oh, K.W. ; Ahn, Chong H. ; Boolchand, P.
more authors

We have measured the stress profile on a silicon membrane electroplated with a permalloy film using Raman scattering. The effect of silicon membrane thickness and permalloy film thickness on stress distribution was studied. Depending upon the nature of stress, the optic phonon in silicon at 520 cm-1 either shifts upward (compressive) or downward (tensile). The phonon frequency shift is proportional to the magnitude of stress. A microscope X-Y stage was used to map the stress distribution over the silicon membrane that was covered and uncovered by the permalloy film. Silicon membranes in the thickness range, 9 μm <tm<12 μm, and permalloy films in the thickness range, 6 μm <tp<13 μm showed evidence of compressive stress. Based on the present results, membrane type microvalve design is optimized to prevent leakage, originating from stressed membranes. Such a nondestructive and noncontact microscopic stress analysis technique can be applied for design optimization in various magnetic MEMS devices

Published in:

Magnetics, IEEE Transactions on  (Volume:37 ,  Issue: 4 )