Referenced Items are not available for this document.
Thin films with barium hexaferrite (BaM) layers on thermally oxidized silicon wafers were fabricated by water-based sol-gel method. Polycrystalline BaFe12O19/SiO2/Si(100) thin films were characterized with Rutherford backscattering, X-ray diffraction, vibrating sample magnetometer, and atomic force microscope as well as Fourier transform infrared spectroscopy (FT-IR). The thin films were annealed at 600-900°C in air for 2 hours. The pattern for the sample annealed at a temperature above 650°C indexed well on the M-type hexagonal structure and no other phases were detectable. The films were composed of uniformly distributed hexagonal-type grains, with diameters between 400 and 600 Å. Surface roughness of the films was between 20 and 40 Å. The perpendicular coercivity HC⊥ and in-plane one HC|| were 4766 Oe and 4380 Oe, respectively, at room temperature under an applied field of 10 kOe annealed at 650°C for 2 hours
Published in:
Magnetics, IEEE Transactions on
(Volume:37
,
Issue:
4
)
Date of Publication: Jul 2001
- Page(s):
- 2585 - 2588
- ISSN :
- 0018-9464
- INSPEC Accession Number:
- 7084185
- Digital Object Identifier :
- 10.1109/20.951243
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Jul 2001
- Sponsored by :
- IEEE Magnetics Society
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