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Properties of high resistivity CoPdAlO film for possibility of application to RF integrated inductor

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6 Author(s)
Kim, Taek-Soo ; Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan ; Suezawa, K. ; Yamaguchi, M. ; Arai, K.
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Presently, an inductor adapted at MMIC (Monolithic microwave integrated circuit) which is used for cellular phone or PHS operates at quasimicrowave range over 800 MHz. However, a W-CDMA (Wideband code division multiple access) will use about 2 GHz range. Therefore magnetic film devices should be compatible up to 2 GHz. We deposited Co-Pd-Al-O system film using rf sputtering method which is expected for operating at 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, Hk was 118 Oe, and showed flat frequency characteristics until 1.5 GHz. The Q factor (=μ'/μ") was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2.9 GHz, therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for next generation MMIC

Published in:

Magnetics, IEEE Transactions on  (Volume:37 ,  Issue: 4 )

Date of Publication:

Jul 2001

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