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Frequency response of common lead and shield type magnetic tunneling junction head

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12 Author(s)
K. Shimazawa ; Data Storage Technol. Center, TDK Corp., Nagano, Japan ; J. J. Sun ; N. Kasahara ; K. Sato
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In this work, the frequency response in magnetic tunnel junction (MTJ) heads was studied. Both stray capacitance and junction resistance, forming a low-pass-filter, have to be reduced to improve the cutoff frequency in MTJ heads. By employing an Ar gas cluster ion beam (GCIB) process, junctions grown on the magnetic shield show a resistance area product as low as 3.6 Ωμm2 and tunneling magneto-resistance over 14%. The dominant capacitance in common lead and shield MTJ heads was found mainly resulting from the shield-to-shield spacing, whose capacitance can be reduced by using an SiO2 gap layer instead of Al2O3 layer and thus leading to an improved frequency response. Simple analysis indicates that a read amplifier design with low impedance could be helpful to realize a high data transfer rate, and a rate of around 800 Mbps for 100 Gbits/in2 recording system can be thus expected

Published in:

IEEE Transactions on Magnetics  (Volume:37 ,  Issue: 4 )