Referenced Items are not available for this document.
A new laser design for single-mode high-power applications is reported. The waveguide is a laterally flaring and transversely tapering GaAs buried ridge fabricated by selective area epitaxy. Single-lateral-mode powers of 200 mW were achieved.
Published in:
Photonics Technology Letters, IEEE
(Volume:13
,
Issue:
10
)
Date of Publication: Oct. 2001
- Page(s):
- 1064 - 1066
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 7097032
- Digital Object Identifier :
- 10.1109/68.950736
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Oct. 2001
- Sponsored by :
- IEEE Photonics Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
