We have proposed an innovative structure of low-voltage rail-to-rail CMOS Active Pixel Sensor (APS), which can work at 1.2 V supply voltage with relative high dynamic range and signal to noise ratio. It is a suitable alternative for the conventional active pixel in portable applications. Compared with the conventional pixel, it surpasses the bottleneck of the voltage limitation and makes the signal voltage as large as possible. We also implement the photodiode type rail-to-rail CMOS active pixel in commercially available 0.25 μm CMOS technology, with a fill factor of 30% and pixel size of 12 μm×10 μm
Published in:
TENCON 2001. Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology
(Volume:2
)
Date of Conference: 2001