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Ultrahigh frequency DC-to-DC converters using GaAs power switches

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2 Author(s)
S. Ajram ; Dept. of Library & Design Tools, ATMEL-Rousset, France ; G. Salmer

A detailed investigation of the switching characteristics for high frequency power devices based on different technologies has been provided: BJT, MOSFET, and MESFET/HEMT structures are considered. Advantages of GaAs power switches over silicon ones have been established and illustrated. Hybrid technology prototypes of DC-to-DC power converters operating above 10 MHz and exclusively using GaAs components have been realized: for a nonoptimized boost converter operating at 100 MHz, a power efficiency of 54% has been achieved with a 6 V/12 V conversion ratio and an output power of 1.5 W. For optimized prototypes, using high frequency assembly techniques, an efficiency of 80% at 50 MHz, 74% at 100 MHz and 60% at 250 MHz have been obtained with 6 V/12 V and 3 W

Published in:

IEEE Transactions on Power Electronics  (Volume:16 ,  Issue: 5 )