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High resolution CdTe detector and applications to imaging devices

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8 Author(s)
Takahashi, T. ; Inst. of Space & Astronaut. Sci., Kanagawa, Japan ; Watanabe, S. ; Sato, G. ; Okada, Y.
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Using a high quality cadmium telluride (CdTe) wafer, we formed a Schottky junction and operated the detector as a diode (CdTe diode). The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with the previous CdTe detectors. For a relatively thin detector of ~0.5 mm thick, the high bias voltage results in a high electric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of 1.1 keV FWHM at 60 keV for a 2×2 mm2 device and 2 keV for a 10×10 mm2 device at 5°C without any charge-loss correction electronics. For astrophysical applications, we have developed a an initial prototype CdTe pixel detector based on the CdTe diode. The detector has 400 pixels with a pixel size of 625×625 μm2. Each pixel is gold-stud bonded to a fanout board and routed to a front end ASIC to measure pulse height information for each γ-ray photon

Published in:

Nuclear Science Symposium Conference Record, 2000 IEEE  (Volume:1 )

Date of Conference:

2000

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