By Topic

Field emission from silicon microstructures formed by femtosecond laser assisted etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
J. E. Carey ; Div. of Appl. Sci., Harvard Univ., Cambridge, MA, USA ; L. Zhao ; C. Wu

Summary form only given. Field-emission arrays have been extensively investigated for device applications such as flat panel displays, electron multipliers and microelectronics. The use of silicon structures as emitters is especially attractive due to the low cost and availability of silicon. Previously, our group reported the formation of sharp, micron-sized conical structures in quasi-ordered arrays after irradiating a silicon surface with hundreds of femtosecond-laser pulses in an atmosphere of SF/sub 6/. These conical microstructures exhibit sharp tips with a radius of curvature /spl sim/0.25 /spl mu/m and a subtended angle of less than 20/spl deg/. Emission currents suitable for applications and comparable with current standards are achieved with no further processing beyond the laser irradiation required to form our microstructures. We report on the field emission properties of these conical microstructures through analysis of the current-voltage characteristics and the Fowler-Nordheim plots obtained for various anodecathode separations.

Published in:

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Date of Conference:

11-11 May 2001