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Low-threshold optically pumped IV-VI quantum well vertical-cavity surface-emitting laser operating at /spl lambda/=4.45 /spl mu/m

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9 Author(s)
Shi, Z. ; Sch. of Electr. Eng. & Comput. Sci., Oklahoma Univ., Norman, OK, USA ; Wu, H.Z. ; Khosravani, S. ; Xu, G.
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Summary form only given. We report pulsed emission from an IV-VI VCSEL whose active region consisted of eight PbSe(30 nm)/Pb/sub 0.97/Sr/sub 0.03/Se(25 nm) quantum wells. The substrate was [111] BaF/sub 2/, which has excellent thermal conductivity in comparison to PbSe.

Published in:

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Date of Conference:

11-11 May 2001