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Reverse-biased GaAs- and Si-pnipn structures for semiconductor devices

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1 Author(s)
Maksymov, P.P. ; Inst. of Radiophys. & Electron., Acad. of Sci., Kharkov, Ukraine

Research on the properties of reverse-biased pnipn structures with the aim of the creation of new semiconductor devices based on these structures is urgent. The present work is dedicated to this problem. As a mathematical model for the study of reverse-biased pnipn structures, the drift-diffusion model was used, which adequately describes the isothermal processes in semiconductors. The solution of the equations of this model is executed by the finite-difference methods for semiconductor structures with abrupt p-n junctions

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Physics and Engineering of Millimeter and Sub-Millimeter Waves, 2001. The Fourth International Kharkov Symposium on  (Volume:2 )

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