By Topic

Frequency stabilization of IMPATT-diode oscillator by open resonator

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Belous, O.I. ; Inst. of Radiophys. & Electron., Acad. of Sci., Kharkov, Ukraine ; Fisun, A.I. ; Olchovskiy, I.P. ; Sirenko, S.P.

The suggested approach to the frequency stabilization by OR makes it promising for using InP Gunn diodes and IMPATT diodes at over 100 GHz. In order to prevent mode jumping and to ensure good matching it is advantageous to use the OR with additional restrictions of resonance space. Owing to the high Q -factor of the oscillating circuit, the frequency noise of IMPATT-diodes is reduced to the noise level of Gunn diodes. High long-term stability can be obtained by thermostabilization of the open resonance system

Published in:

Physics and Engineering of Millimeter and Sub-Millimeter Waves, 2001. The Fourth International Kharkov Symposium on  (Volume:2 )

Date of Conference:

2001