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Frequency stabilization of IMPATT-diode oscillator by open resonator

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4 Author(s)
Belous, O.I. ; Inst. of Radiophys. & Electron., Acad. of Sci., Kharkov, Ukraine ; Fisun, A.I. ; Olchovskiy, I.P. ; Sirenko, S.P.

The suggested approach to the frequency stabilization by OR makes it promising for using InP Gunn diodes and IMPATT diodes at over 100 GHz. In order to prevent mode jumping and to ensure good matching it is advantageous to use the OR with additional restrictions of resonance space. Owing to the high Q -factor of the oscillating circuit, the frequency noise of IMPATT-diodes is reduced to the noise level of Gunn diodes. High long-term stability can be obtained by thermostabilization of the open resonance system

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Physics and Engineering of Millimeter and Sub-Millimeter Waves, 2001. The Fourth International Kharkov Symposium on  (Volume:2 )

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