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Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (111)Si substrates

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4 Author(s)
Venugopal, R. ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Liaw, H.M. ; Wan, J. ; Melloch, M.R.

Use of an AlN buffer layer is an enabling technique for the epitaxial growth of GaN on Si(111) substrates. The AlN growth temperature has been shown to be a significant factor that affects the properties of the GaN film and the AlGaN/GaN heterostructure. The AlN buffer grown at 1155°C exhibited a uniform sized, preferred-oriented and highly faceted grain microstructure that led to subsequently grown AlGaN/GaN films with better quality than those on the AlN buffer grown at other temperatures. The AlGaN/GaN film quality evaluated included photoluminescence properties, surface planarity, Hall mobility and film strain

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Compound Semiconductors, 2000 IEEE International Symposium on

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