Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

The influence of rapid thermal annealing on InAsP/InP strained multiple quantum well laser diodes grown by metalorganic vapor phase epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Wei-Han Wang ; Telecommun. Labs., Chunghwa Telecom Co. Ltd., Taoyuan, Taiwan ; Lee, Chong-Yi ; Ya-De Tian ; Tian-Tsorng Shih

We have demonstrated that the threshold current of InAsP/InP strained multiple quantum well ridge-waveguide (RWG) LDs decreased significantly by applying an optimal post-growth rapid thermal annealing procedure. It was found that the PL peak wavelengths of the InAsP/InP SSQW stack only slightly shifted of 1-4 nm and the FWHMs remained almost unaffected after 700°C RTA, indicating that interdiffusion of group-V elements did not damage the device structures

Published in:

Compound Semiconductors, 2000 IEEE International Symposium on

Date of Conference: