Cart (Loading....) | Create Account
Close category search window

The influence of rapid thermal annealing on InAsP/InP strained multiple quantum well laser diodes grown by metalorganic vapor phase epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Wei-Han Wang ; Telecommun. Labs., Chunghwa Telecom Co. Ltd., Taoyuan, Taiwan ; Lee, Chong-Yi ; Ya-De Tian ; Tian-Tsorng Shih

We have demonstrated that the threshold current of InAsP/InP strained multiple quantum well ridge-waveguide (RWG) LDs decreased significantly by applying an optimal post-growth rapid thermal annealing procedure. It was found that the PL peak wavelengths of the InAsP/InP SSQW stack only slightly shifted of 1-4 nm and the FWHMs remained almost unaffected after 700°C RTA, indicating that interdiffusion of group-V elements did not damage the device structures

Published in:

Compound Semiconductors, 2000 IEEE International Symposium on

Date of Conference:


Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.