By Topic

Optical constants of GaAs from 0.73 to 6.60 eV for dielectric film thickness metrology in compound semiconductor manufacturing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
S. Zollner ; Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA ; D. Zarr

This article describes the optical constants of GaAs from 0.73 to 6.60 eV determined using spectroscopic ellipsometry. Our setup includes a computer-controlled MgF2 Berek waveplate compensator, which allows exact measurements of the ellipsometric angle Δ below the band gap. Therefore, our data are very accurate over a broad range. We apply our results to determine thicknesses and optical properties of various dielectrics (SiO2, silicon nitride, and sputtered AlN) on GaAs

Published in:

Compound Semiconductors, 2000 IEEE International Symposium on

Date of Conference:

2000