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Optical constants of GaAs from 0.73 to 6.60 eV for dielectric film thickness metrology in compound semiconductor manufacturing

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2 Author(s)
S. Zollner ; Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA ; D. Zarr

This article describes the optical constants of GaAs from 0.73 to 6.60 eV determined using spectroscopic ellipsometry. Our setup includes a computer-controlled MgF2 Berek waveplate compensator, which allows exact measurements of the ellipsometric angle Δ below the band gap. Therefore, our data are very accurate over a broad range. We apply our results to determine thicknesses and optical properties of various dielectrics (SiO2, silicon nitride, and sputtered AlN) on GaAs

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Compound Semiconductors, 2000 IEEE International Symposium on

Date of Conference: