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Summary form only given. In this work results of electrical characterization of plasma-synthesized thin nanocrystalline c-BN films, deposited on Si p-type and n-type substrates, are presented, based on capacitance-voltage and current-voltage measurements of MIS Al/BN/Si structures. Results are also shown of structural investigations of the layers (SEM images). Finally, we will demonstrate the possibility of selective dry RF plasma etching of BN layers using various gas mixtures, which is a continuation of our earlier efforts.