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X-ray diffraction study on ELOG (epitaxial lateral overgrowth) GaN layers

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2 Author(s)
Domagala, J. ; Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland ; Beaumont, B.

Summary form only given. The authors present X-ray diffraction data obtained for GaN ELOG samples grown using MOVPE on a sapphire substrate and using a 10 nm thick SiN mask. It can be seen that the lattice parameter c is larger than for the buffer layer, whereas the situation is opposite for the lattice parameter a. For the masked region, the dislocation density is significantly reduced, but this is an additional source of strain between the mask and window regions.

Published in:

Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of

Date of Conference:

26-30 June 2001

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