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Optoelectronic devices based on (AlGaIn)N structures on GaN crystals

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1 Author(s)
Leszczynski, M. ; High Pressure Res. Center, UNIPRESS, Warsaw, Poland

Summary form only given. One of the most important problems in (AlGaIn)N technology is lack of easily available lattice-matched substrate for epitaxial growth. The author shows the advantages of using high pressure (HP) bulk crystals as substrates for nitride epitaxy over sapphire or SiC. The experimental results are presented from atomic force microscopy (AFM), X-ray diffraction (XRD) rocking curves, transmission electron microscopy (TEM), photoluminescence (PL), and electroluminescence (EL) of a blue laser.

Published in:

Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of

Date of Conference:

26-30 June 2001