We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Optoelectronic devices based on (AlGaIn)N structures on GaN crystals

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Leszczynski, M. ; High Pressure Res. Center, UNIPRESS, Warsaw, Poland

Summary form only given. One of the most important problems in (AlGaIn)N technology is lack of easily available lattice-matched substrate for epitaxial growth. The author shows the advantages of using high pressure (HP) bulk crystals as substrates for nitride epitaxy over sapphire or SiC. The experimental results are presented from atomic force microscopy (AFM), X-ray diffraction (XRD) rocking curves, transmission electron microscopy (TEM), photoluminescence (PL), and electroluminescence (EL) of a blue laser.

Published in:

Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of

Date of Conference:

26-30 June 2001