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Electromigration modeling for integrated circuit interconnect reliability analysis

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1 Author(s)
Clement, J.J. ; Sandia Nat. Labs., Albuquerque, NM, USA

A simple one-dimensional continuum model for electromigration transport has been fairly successful as a tool for understanding many empirical observations of electromigration phenomena in encapsulated interconnect lines on integrated circuits. In this paper, the development of the one-dimensional continuum electromigration model is reviewed, Comparisons are made with previous models, emphasizing the important similarities and differences,

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Device and Materials Reliability, IEEE Transactions on  (Volume:1 ,  Issue: 1 )