By Topic

1.55-μm buried-heterostructure VCSELs with InGaAsP/lnP-GaAs/AlAs DBRs on a GaAs substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Ohiso, Y. ; NTT Photonics Labs., Kanagawa, Japan ; Okamoto, H. ; Iga, R. ; Kishi, K.
more authors

We demonstrate 1.55-μm buried-heterostructure (BH) vertical-cavity surface-emitting lasers (VCSELs) on a GaAs substrate. Thin-film wafer-fusion technology enables InP-based BH VCSELs to be fabricated on GaAs/AlAs distributed Bragg reflectors. Detailed investigations of the device resistance are also described. As a result of introducing BH and obtaining low device resistance, the threshold current density under CW operation shows the independence of mesa size due to a strong index guide and small noneffective current. A 5-μm VCSEL exhibits a record threshold current of 380 μA at 20°C. This VCSEL also operates with single transverse mode up to the maximum optical output power

Published in:

Quantum Electronics, IEEE Journal of  (Volume:37 ,  Issue: 9 )